nzt560/nzt560a ? npn low saturation transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com nzt560/nzt560a rev. d1 1 may 2009 nzt560/nzt560a npn low saturation transistor features ? these devices are designed with high current gain and low saturation voltage with collector currents up to 3a continuous. absolute maximum ratings* t a =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1)these ratings are based on a maximum junction tem perature of 150 c. 2)these are steady state limits. the factory should be consulted on applications involving pulsed or l ow duty cycle operations. thermal characteristics t a =25 c unless otherwise noted symbol parameter ratings units v ceo collector-emitter voltage 60 v v cbo collector-base voltage 80 v v ebo emitter-base voltage 5 v i c collector current - continuous 3 a t j , t stg operating and storage junction temperature range - 5 5 to +150 c symbol parameter max. units nzt560 nzt560a p d total device dissipation 1 w r ja thermal resistance, junction to ambient 125 c/w 1. base 2. collector 3. emitter 1 2 2 3
nzt560/nzt560a ? npn low saturation transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com nzt560/nzt560a rev. d1 2 electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter test conditions min. max. units off characteristics bv ceo collector-emitter breakdown voltage i c = 10ma 60 v bv cbo collector-base breakdown voltage i c = 100 a 80 v bv ebo emitter-base breakdown voltage i e = 100 a 5 v i cbo collector cutoff current v cb = 30v v cb = 30v, t a = 100 c 100 10 na a i ebo emitter cutoff current v eb = 4v 100 na on characteristics * h fe dc current gain i c = 100ma, v ce = 2v i c = 500ma, v ce = 2v nzt560 nzt 560a i c = 1a, v ce = 2v i c = 3a, v ce = 2v 70 100 250 80 25 300 550 v ce (sat) collector-emitter saturation voltage i c = 1a, i b = 100ma i c = 3a, i b = 300ma nzt560 nzt 560a 300 450 400 mv mv mv v be (sat) base-emitter saturation voltage i c = 1a, i b = 100ma 1.25 v v be (on) base-emitter on voltage i c = 1a, v ce = 2v 1 v small signal characteristics c obo output capacitance v cb = 10v, i e = 0, f = 1mhz 30 pf f t transition frequency i c = 100ma, v ce = 5v, f = 100mhz 75 mhz
nzt560/nzt560a ? npn low saturation transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com nzt560/nzt560a rev. d1 3 typical performance characteristics figure 1. base-emitter saturation voltage vs collector current figure 2. base-emitter on voltage vs collector current figure 3. collector-emitter saturation voltage vs collector current figure 4. input/output capacitance vs reverse bias voltage figure 5. current gain vs collector current figure 6 . current gain vs collector current base-emitter on voltage vs. collector current 0.0001 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 i - collector current (a) v - base-emitter on voltage (v) c beon 25 c - 40 c 125 c v = 2.0v ce input/output capacitance vs. reverse bias voltage 0.1 0.2 0.5 1 2 5 10 20 50 100 0 50 100 150 200 250 300 350 400 450 v - collector voltage (v) capacitance (pf) ce f = 1.0 mhz c ibo c obo 0.001 0.010 0.100 1.000 10.000 0 100 200 300 400 nzt560 -40 o c v ce = 2 v t a =150 o c 25 o c h fe - dc current gain i c - collector current [a] 0.001 0.010 0.100 1.000 10.000 0 100 200 300 400 500 600 700 nzt560a -40 o c v ce = 2 v t a =125 o c 25 o c h fe - dc current gain i c - collector current [a]
nzt560/nzt560a ? npn low saturation transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com nzt560/nzt560a rev. d1 4 physical dimensions sot-223 3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1.60 0.20 (0.46)(0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 ~10
+0.10
C0.05 0.06 +0.04
C0.02 dimensions in millimeters
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